CPH5852 Sanyo Semicon Device, CPH5852 Datasheet

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CPH5852

Manufacturer Part Number
CPH5852
Description
P-Channel Silicon MOSFET
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet4U.com
Ordering number : ENA0336
CPH5852
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Marking : YE
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3),
facilitating high-density mounting.
[MOS]
[SBD]
Low ON-resistance
Ultrahigh-speed switching
4V drive
Short reverse recovery time
Low forward voltage
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Symbol
V RRM
V RSM
V DSS
V GSS
I FSM
Tstg
Tstg
I DP
Tch
P D
I D
I O
Tj
SANYO Semiconductors
PW 10 s, duty cycle 1%
Mounted on a ceramic board (600mm
50Hz sine wave, 1cycle
CPH5852
Conditions
2
82306 / 60506PE MS IM TB-00002326
0.8mm) 1unit
DATA SHEET
Ratings
--55 to +125
--55 to +125
--55 to +125
GI IM
150
--30
0.9
30
35
10
20
--2
--8
No. A0336-1/6
1
Unit
W
V
V
A
A
V
V
A
A
C
C
C
C

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CPH5852 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH5852 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...

Page 2

... Cathode 0.95 0 Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 CPH5852 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--30V =0V I GSS V GSS = 16V = (off =--10V -1mA yfs V DS =--10V - (on =--1A =--10V ...

Page 3

... Drain-to-Source Voltage (on 400 350 300 250 --1.0A 200 --0.5A 150 100 --2 --4 --6 --8 --10 Gate-to-Source Voltage CPH5852 t rr Test Circuit [SBD] Duty 10 OUT 10 s CPH5852 [MOSFET] --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT03212 [MOSFET] 400 Ta=25 C 350 300 250 200 150 100 ...

Page 4

... --10V -- --2A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature CPH5852 [MOSFET] -- 10V --1 --0 --0. --0.2 --0.3 --10 IT03216 [MOSFET 100 ...

Page 5

... Average Output Current FSM -- t 14 Current waveform 50Hz sine wave 0. 0 Time CPH5852 10000 5 1000 5 100 1.0 5 0.1 5 0.01 5 0.001 5 0.0001 0.5 0.6 0.7 0 IT09553 3 2 (2) (4)(3) 100 7 5 ...

Page 6

... Note on usage : Since the CPH5852 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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