CPH6619 Sanyo Semicon Device, CPH6619 Datasheet

CPH6619

Manufacturer Part Number

CPH6619

Description

N-Channel and P-Channel Silicon MOSFETs

Manufacturer

Sanyo Semicon Device

Datasheet

1.CPH6619.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

CPH6619-TL-E

Manufacturer:

SANYO/三洋

Quantity:

20 000

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Ordering number : ENA0473

CPH6619

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : WF

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET

for driving P-channel MOSFET enables high-density mounting.

Excellent ON-resistance characterristic.

Best suited for load switches.

N-channel 1.5V drive, P-channel 1.8V drive.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V DSS

V GSS

I GSS

I DSS

Coss

Crss

Ciss

Tstg

I DP

Tch

P D

yfs

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

I D

SANYO Semiconductors

I D =1mA, V GS =0V

V DS =30V, V GS =0V

V GS = 8V, V DS =0V

V DS =10V, I D =100 A

V DS =10V, I D =80mA

I D =80mA, V GS =4V

I D =40mA, V GS =2.5V

I D =10mA, V GS =1.5V

V DS =10V, f=1MHz

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

CPH6619

Conditions

0.8mm) 1unit

DATA SHEET

72006PE MS IM TC-00000048

N-channel

min

0.13

0.4

--55 to +150

0.4

1.6

Ratings

150

0.8

typ

0.22

2.9

3.7

6.4

5.9

2.3

P-channel

Continued on next page.

max

- -12

12.8

--2

--8

1.3

3.7

5.2

No. A0473-1/7

Unit

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