ECH8620 Sanyo Semicon Device, ECH8620 Datasheet
ECH8620
Related parts for ECH8620
ECH8620 Summary of contents
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... Ordering number : ENA0659 ECH8620 Features The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and • ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...
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... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View ECH8620 Symbol Conditions Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss V DS =20V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit. ...
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... V OUT PW=10µs D.C.≤1% ECH8620 P.G [Nch] --1.5 --1.2 --0.9 --0.6 --0 =2.5V 0 0.7 0.8 0.9 1.0 IT10620 [Nch] --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 2.5 3.0 3.5 4.0 IT10621 --50V -- =50Ω OUT G ECH8620 50Ω --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage 10V 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage [Pch] --0.8 --0.9 --1.0 IT10609 [Pch] --3.0 --3.5 IT10610 No. A0659-3/6 ...
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... Drain Current 0.001 0.2 0.4 0.6 0.8 Diode Forward Voltage ECH8620 [Nch] 1000 Ta=25 ° C 900 800 700 600 500 --0.5A 400 300 200 100 IT10622 [Nch] 1000 900 800 700 600 500 400 ...
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... R DS (on). 0 Ta=25 °C 3 Single pulse 2 ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm 0. 0.1 1.0 10 Drain-to-Source Voltage ECH8620 [Nch] 1000 V DD =50V 100 1 ...
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... Ambient Temperature °C Note on usage : Since the ECH8620 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...