ECH8655R Sanyo Semicon Device, ECH8655R Datasheet - Page 2

• Manufacturer Part Number: ECH8655R
• Description: N-Channel Silicon MOSFET
• Manufacturer: Sanyo Semicon Device

www.DataSheet.co.kr
Continued from preceding page.
Package Dimensions
unit : mm (typ)
7011A-003
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
4.5V
0V
PW=10μs
D.C.≤1%
V IN
1
8
0.65
Parameter
Bottom View
Top View
V IN
2.9
G
50Ω
R g =1kΩ
5
R g
4
0.3
V DD =10V
D
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
S
0.15
I D =4.5A
R L =2.22Ω
ECH8655R
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)4
Symbol
0 to 0.02
t d (on)
t d (off)
V OUT
V SD
Qgs
Qgd
Qg
t r
t f
I D =4.5A, V GS =4.5V
I D =4.5A, V GS =4.0V
I D =4.5A, V GS =3.1V
I D =2A, V GS =2.5V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =9A
V DS =10V, V GS =10V, I D =9A
V DS =10V, V GS =10V, I D =9A
I S =9A, V GS =0V
ECH8655R
Electrical Connection
Conditions
8
1
7
2
6
3
5
4
min
10.5
9.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
9
9
Ratings
typ
2400
2100
1100
13.5
16.8
320
1.6
4.8
0.8
13
15
18
max
25.5
1.2
17
18
21
No. A1011-2/4
Unit
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
ns
ns
ns
ns
V
Datasheet pdf - http://www.DataSheet4U.net/