HAT1055RJ Renesas Technology, HAT1055RJ Datasheet
HAT1055RJ
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HAT1055RJ Summary of contents
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... HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching Features www.DataSheet4U.com Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline Rev.1.00, Aug.29.2003, page SOP ...
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... HAT1055R, HAT1055RJ Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current www.DataSheet4U.com Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. 1 Drive operation: When using the glass epoxy board (FR4 1.6 mm ...
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... Body-drain diode reverse recovery time Notes: 5. Pulse test Rev.1.00, Aug.29.2003, page Symbol Min Typ V –60 — (BR)DSS 20 — (BR)GSS I — — DSS HAT1055R I — — DSS HAT1055RJ I — — DSS I — — GSS V –1.0 — GS(off — 60 DS(on) R — ...
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... HAT1055R, HAT1055RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 3.0 2.0 www.DataSheet4U.com 1.0 0 Ambient Temperature Typical Output Characteristics –10 –8 –6 –4 –2 0 –2 Drain to Source voltage Rev.1.00, Aug.29.2003, page –100 –30 40 1.6 mm –10 – ...
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... HAT1055R, HAT1055RJ Drain to Source Saturation Voltage vs. –1 –0.8 –0.6 –0.4 www.DataSheet4U.com –0 Gate to Source Voltage Static Drain to Source on State Resistance 0.25 Pulse Test 0.20 0. 0.10 0.05 0 –40 Case Temperature Rev.1.00, Aug.29.2003, page Gate to Source Voltage Pulse Test I = – –2 A –1 A – ...
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... HAT1055R, HAT1055RJ 1000 500 200 100 www.DataSheet4U.com –0.1 –0.3 Reverse Drain Current Dynamic Input Characteristics 0 –20 – –60 V –80 –100 0 Rev.1.00, Aug.29.2003, page Body-Drain Diode Reverse Recovery Time 100 –1 –3 –10 – ...
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... HAT1055R, HAT1055RJ Reverse Drain Current vs. Source to Drain Voltage –10 –8 –10 V –6 –5 V –4 www.DataSheet4U.com – –0.4 Source Drain Voltage Avalanche Test Circuit V Monitor Vin -15 V Switching Time Test Circuit Vin Monitor Rg Vin -10 V Rev.1.00, Aug.29.2003, page Pulse Test ...
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... HAT1055R, HAT1055RJ 10 1 0.1 www.DataSheet4U.com 0.01 0.001 0.0001 0.1 0.01 0.001 0.0001 10 Rev.1.00, Aug.29.2003, page Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 100 100 m Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 100 ...
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... HAT1055R, HAT1055RJ Package Dimensions www.DataSheet4U.com *Dimension including the plating thickness Base material dimension Rev.1.00, Aug.29.2003, page 4.90 5.3 Max 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.15 0. January, 2003 Unit 0.10 6.10 – 0.30 1.08 0˚ – 8˚ + 0.67 0.60 – 0.20 Package Code FP-8DA JEDEC Conforms JEITA — Mass (reference value) ...
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... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...