HAT1054R Renesas Technology, HAT1054R Datasheet

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HAT1054R

Manufacturer Part Number
HAT1054R
Description
Silicon P Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet

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www.DataSheet4U.com
HAT1054R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.3.00 Sep 07, 2005 page 1 of 7
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
2
MOS1
D
S
7 8
1
D
G
4
MOS2
D
5 6
S
3
D
(Previous: ADE-208-1224A)
1, 3
2, 4
5, 6, 7, 8
REJ03G1154-0300
Source
Gate
Drain
Sep 07, 2005
Rev.3.00

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HAT1054R Summary of contents

Page 1

... HAT1054R Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance www.DataSheet4U.com Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.3.00 Sep 07, 2005 page ...

Page 2

... HAT1054R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Notes duty cycle 2. 1 Drive operation: When using the glass epoxy board (FR4 40 3 ...

Page 3

... HAT1054R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1.0 www.DataSheet4U.com Ambient Temperature Typical Output Characteristics –20 –16 –12 –8 – –2 Drain to Source Voltage Drain to Source Saturation Voltage vs. ...

Page 4

... HAT1054R Static Drain to Source on State Resistance 0.10 0.08 0. 0.04 0.02 –4.5 V www.DataSheet4U.com 0 –40 0 Case Temperature Body-Drain Diode Reverse 500 200 100 –0.2 –0.5 Reverse Drain Current Dynamic Input Characteristics 0 – –20 – – – – – Gate Charge Rev ...

Page 5

... HAT1054R www.DataSheet4U.com Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.1 0.01 0.001 0.0001 10 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.1 0.01 0.001 0.0001 10 µ Rev.3.00 Sep 07, 2005 page Switching Characteristics 500 t f 200 t d(off) 100 d(on – ...

Page 6

... HAT1054R Switching Time Test Circuit Vin Monitor Rg Vin –4.5 V www.DataSheet4U.com Rev.3.00 Sep 07, 2005 page Vin Vout Monitor D.U. –10 V Vout t d(on) Switching Time Waveform 10% 90% 90% 90% 10% 10 d(off ...

Page 7

... Index mark 1 Z www.DataSheet4U.com Ordering Information Part Name HAT1054R-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page RENESAS Code Package Name MASS[Typ.] PRSP0008DD-D FP-8DAV 0 ...

Page 8

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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