HAT1054R Renesas Technology, HAT1054R Datasheet - Page 4

• Manufacturer Part Number: HAT1054R
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1054R
Rev.3.00 Sep 07, 2005 page 4 of 7
0.10
0.08
0.06
0.04
0.02
–10
–20
–30
–40
–50
500
200
100
Static Drain to Source on State Resistance
50
20
10
–0.2
–40
5
0
0
0
Reverse Drain Current
V
I
D
Case Temperature
Dynamic Input Characteristics
DS
V
V
= –6 A
Body-Drain Diode Reverse
DD
–0.5
GS
Gate Charge
–4.5 V
0
8
= –10 V
= –2.5 V
vs. Temperature
V
–5 V
Recovery Time
DD
–1
40
16
= –5 V
–10 V
I
D
–2
V
di / dt = 20 A / µs
V
= –5 A
–1 A, –2 A, –5 A
GS
GS
80
24
= 0, Ta = 25°C
Qg (nc)
–5
–1 A, –2 A
Tc (°C)
I
120
DR
32
–10 –20
(A)
160
40
–10
–2
–4
–6
–8
0
10000
3000
1000
–20
–16
–12
300
100
0.5
0.2
–8
–4
30
10
20
10
–0.2
0
5
2
1
0
0
Source to Drain Voltage
Drain to Source Voltage V
Forward Transfer Admittance vs.
Reverse Drain Current vs.
–0.5
V
–0.4
Typical Capacitance vs.
Drain to Source Voltage
–4
Source to Drain Voltage
GS
Drain Current I
Tc = –25°C
=
75°C
–
Drain Current
–1
5 V
–0.8
–8
–2
0, 5 V
–1.2
25°C
–12
D
V
Pulse Test
–5
V
f = 1 MHz
DS
Pulse Test
(A)
GS
–1.6
V
–16
= –10 V
SD
Coss
DS
Crss
Ciss
= 0
–10 –20
(V)
(V)
–2.0
–20