HAT1054R Renesas Technology, HAT1054R Datasheet - Page 2

• Manufacturer Part Number: HAT1054R
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1054R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.3.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Pulse test
10 s, duty cycle
Item
Item
1%
V
V
Symbol
V
R
R
Coss
(BR) DSS
(BR) GSS
Ciss
Crss
t
t
Qgs
Qgd
I
I
GS (off)
DS (on)
DS (on)
V
|y
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
–0.4
Symbol
Min
–20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
6
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note 2
Note 3
Note 1
–0.85
1550
Typ
400
300
6.5
24
35
10
18
25
50
85
40
60
—
—
—
—
—
3
–1.10
Max
–1.4
–1
30
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
40
40
10
–55 to +150
1.6 mm), PW
1.6 mm), PW
Value
–20
–48
150
Unit
–6
–6
m
m
nC
nC
nC
pF
pF
pF
12
2
3
ns
ns
ns
ns
ns
V
V
V
V
S
A
A
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
Rg = 4.7
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
F
= –6 A, V
= –6 A, V
= –10 mA, V
= 100 A, V
= –3 A, V
= –3 A, V
= –3 A, V
= –6 A
/dt = 20 A/ s
= 3.3
= 10 V, V
= –20 V, V
= –10 V, I
= –10 V
= 0
= –10 V
= –4.5 V
= –4.5 V, I
10 s
10 s
Test Conditions
–10 V
GS
GS
GS
GS
DS
D
= 0
= 0
= –4.5 V
= –2.5 V
= –10 V
D
GS
GS
DS
DS
= –1 mA
Unit
= –3 A,
(Ta = 25 C)
(Ta = 25 C)
W
W
V
V
A
A
A
= 0
= 0
= 0
C
C
Note 4
= 0
Note 4
Note 4
Note 4