HAT1054R Renesas Technology, HAT1054R Datasheet - Page 3

• Manufacturer Part Number: HAT1054R
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1054R
Main Characteristics
Rev.3.00 Sep 07, 2005 page 3 of 7
–0.20
–0.16
–0.12
–0.08
–0.04
–20
–16
–12
4.0
3.0
2.0
1.0
–8
–4
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Test Condition:
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
–2
–2
Gate to Source Voltage
50
–10 V
–4 V
–5 V
–4
–4
100
–6
–6
V
GS
–2.5 V
Pulse Test
–2 V
= –1.5 V
Pulse Test
150
Ta (°C)
V
I
V
–8
D
–8
GS
DS
= –5 A
–1 A
–2 A
(V)
(V)
200
–10
–10
–0.03
–0.01
–100
–0.3
–0.1
0.05
0.02
0.01
–30
–10
–20
–16
–12
Static Drain to Source on State Resistance
0.5
0.2
0.1
–3
–1
–8
–4
–0.2
–0.1
0
1
0
Gate to Source Voltage
Ta = 25°C
1 shot pulse
1 Drive Operation
Drain to Source Voltage V
Operation in
this area is
limited by R
Note 5:
Typical Transfer Characteristics
Maximum Safe Operation Area
Pulse Test
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
–0.3
Tc = –25°C
–0.5
–1
Drain Current
25°C
vs. Drain Current
V
–1
GS
–1
DS (on)
–2
= –2.5 V
–4.5 V
–3
–2
75°C
–3
–10
10 µs
I
V
Pulse Test
D
–5
DS
V
(A)
= –10 V
–4
–30
GS
DS
–10
(V)
(V)
–100
–20
–5