HAT1055RJ Renesas Technology, HAT1055RJ Datasheet - Page 2

• Manufacturer Part Number: HAT1055RJ
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1055R, HAT1055RJ
Absolute Maximum Ratings
(Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.1.00, Aug.29.2003, page 2 of 9
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
4. Value at Tch = 25 C, Rg
10 s, duty cycle
Symbol
V
V
I
I
I
E
Pch
Pch
Tch
Tstg
D
D
AP
DSS
GSS
AR
(pulse)
Note4
Note4
Note2
Note3
1%
50
Note1
Ratings
HAT1055R
–60
–5
–40
—
—
2
3
150
–55 to +150
20
HAT1055RJ
–60
–5
–40
–5
2.14
2
3
150
–55 to +150
20
Unit
V
V
A
A
A
mJ
W
W
C
C
10 s
10 s