HAT1127H Renesas Technology, HAT1127H Datasheet - Page 2

• Manufacturer Part Number: HAT1127H
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1127H
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 3. Pulse test
Rev.5.00 Jan 20, 2006 page 2 of 6
Item
Symbol
V
V
R
R
Coss
(BR)DSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
GS(off)
|y
V
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
–1.0
Min
–30
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–0.88
5600
1180
Typ
890
125
130
115
120
3.6
5.3
70
15
28
25
40
—
—
—
—
–1.15
Max
–2.5
4.5
7.7
—
–1
—
—
—
—
—
—
—
—
—
—
—
—
0.1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
V
I
I
I
V
f = 1 MHz
V
I
V
V
Rg = 4.7
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
DS
DD
GS
DD
F
= –40 A, V
= –40 A, V
= –10 mA, V
= –20 A, V
= –20 A, V
= –20 A, V
= –40 A
/ dt = 100 A/ s
= –30 V, V
= –10 V, I
= –10 V, V
= –10 V, V
= –20/+10 V, V
= –10 V, I
–10 V, R
Test Conditions
GS
GS
GS
GS
DS
D
GS
GS
GS
D
GS
L
= 0
= 0
= –10 V
= –4.5 V
= –10 V
= -20 A,
= 0.5 ,
= –1 mA
= 0
= 0
= 0,
= –10 V,
(Ta = 25°C)
Note3
DS
= 0
Note3
Note3
Note3