HAT2099H Renesas Technology, HAT2099H Datasheet - Page 5

• Manufacturer Part Number: HAT2099H
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2099H
Rev.5.00 Sep 07, 2005 page 5 of 7
Vin
15 V
50
40
30
20
10
0
0
Source to Drain Voltage
Avalanche Test Circuit
Reverse Drain Current vs.
0.03
0.01
V
Monitor
Source to Drain Voltage
0.4
10 V
0.3
0.1
50 Ω
5 V
DS
10 µ
3
1
Rg
D = 1
0.5
0.8
V
GS
Normalized Transient Thermal Impedance vs. Pulse Width
1.2
100 µ
D.U.T
= 0
I
Monitor
AP
Pulse Test
V
L
1.6
SDF
(V)
1 m
2.0
V
DD
Pulse Width PW (S)
10 m
0
V
DD
P
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
DM
E
AR
100 m
5
4
3
2
1
0
25
=
I
Channel Temperature Tch (°C)
AP
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Waveform
1
2
PW
50
T
• L • I
I
D
AP
1
75
2
D =
Tc = 25°C
•
V
100
PW
DSS
T
I
V
duty < 0.1 %
Rg ≥ 50 Ω
AP
V
DD
DSS
= 5 A
– V
10
= 15 V
125
V
DD
DS
V
(BR)DSS
150