HAT2204C Renesas Technology, HAT2204C Datasheet
HAT2204C
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HAT2204C Summary of contents
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... HAT2204C Silicon N Channel MOS FET Power Switching Features Low on-resistance R = 26m typ.(at V DS(on) Low drive current High density mounting 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...
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... HAT2204C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time ...
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... HAT2204C Main Characteristics Power vs.Temperature Dreating 1.6 Test condition When using the glass epoxy board.(FR4 1.6 mm) 1.2 0.8 0 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 120 80 40 ...
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... HAT2204C Static Drain to Source On State Resistance vs. Temperature 100 1.8, 3 − Case Temperature Dynamic Input Characteristics 3 Gate Charge Reverse Drain Current vs. Source to Drain Voltage ...
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... HAT2204C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 4.5 V REJ03G0448-0500 Rev.5.00 May 10, 2007 Page Switching Time Waveform Vout Monitor R L 10% Vin V DS Vout 10 td(on) 90% 10% 90% 90% td(off ...
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... A-A Section Ordering Information Part Name HAT2204C-EL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0448-0500 Rev.5.00 May 10, 2007 Page RENESAS Code Previous Code MASS[Typ ...
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... Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications ...