HAT2204C Renesas Technology, HAT2204C Datasheet

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HAT2204C

Manufacturer Part Number
HAT2204C
Description
Silicon N Channel MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
HAT2204C
Silicon N Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 1 of 7
Low on-resistance
R
Low drive current
High density mounting
1.8 V gate drive device
DS(on)
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
= 26m
10 s, duty cycle
typ.(at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Item
GS
= 4.5 V)
1%
Index band
6
5
4
1
I
D (pulse)
Pch
2
Symbol
V
V
Tstg
Tch
3
I
DSS
GSS
I
DR
D
Note2
Note1
6
G
2
D
3
D
4
D
5
D
S
1
–55 to +150
Ratings
900
150
3.5
3.5
12
14
8
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G0448-0500
May 10, 2007
Unit
mW
V
V
A
A
A
C
C
(Ta = 25°C)
Rev.5.00

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HAT2204C Summary of contents

Page 1

... HAT2204C Silicon N Channel MOS FET Power Switching Features Low on-resistance R = 26m typ.(at V DS(on) Low drive current High density mounting 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...

Page 2

... HAT2204C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time ...

Page 3

... HAT2204C Main Characteristics Power vs.Temperature Dreating 1.6 Test condition When using the glass epoxy board.(FR4 1.6 mm) 1.2 0.8 0 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 120 80 40 ...

Page 4

... HAT2204C Static Drain to Source On State Resistance vs. Temperature 100 1.8, 3 − Case Temperature Dynamic Input Characteristics 3 Gate Charge Reverse Drain Current vs. Source to Drain Voltage ...

Page 5

... HAT2204C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 4.5 V REJ03G0448-0500 Rev.5.00 May 10, 2007 Page Switching Time Waveform Vout Monitor R L 10% Vin V DS Vout 10 td(on) 90% 10% 90% 90% td(off ...

Page 6

... A-A Section Ordering Information Part Name HAT2204C-EL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0448-0500 Rev.5.00 May 10, 2007 Page RENESAS Code Previous Code MASS[Typ ...

Page 7

... Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications ...

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