HAT2218R Renesas Technology, HAT2218R Datasheet
HAT2218R
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HAT2218R Summary of contents
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... HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...
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... HAT2218R Electrical Characteristics • MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...
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... HAT2218R Main Characteristics MOS1 Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 20 4 Pulse Test 0 5 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...
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... HAT2218R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics 7 ...
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... HAT2218R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 100 10 Rev.3.00, Aug.23.2004, page Reverse Drain Current vs. Source to Drain Voltage 0V, – Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage f( ( 125 C/ When using the glass epoxy board (FR4 40x40x1 ...
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... HAT2218R • MOS2 & Schottky Barrier Diode Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 20 4 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...
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... HAT2218R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics ...
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... HAT2218R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 100 10 • Common Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.3.00, Aug.23.2004, page Reverse Drain Current vs. Source to Drain Voltage 0V, – Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage ...
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... Base material dimension Ordering Information Part Name HAT2218R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Aug.23.2004, page ...
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... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...