HAT3021R Renesas Technology, HAT3021R Datasheet
HAT3021R
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HAT3021R Summary of contents
Page 1
... HAT3021R Silicon N/P Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ...
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... HAT3021R Electrical Characteristics • N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance ...
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... HAT3021R • P Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...
Page 4
... HAT3021R Main Characteristics N Channel Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 10 4 Pulse Test 0 5 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...
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... HAT3021R Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 150 100 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 Reverse Drain Current Dynamic Input Characteristics ...
Page 6
... HAT3021R Normalized Transient Thermal Impedance vs. Pulse Width 0.1 0.01 0.001 0.0001 10 100 Switching Time Test Circuit Vin Monitor Rg Vin 10 V Rev.2.00, Oct.06.2004, page Reverse Drain Current vs. Source to Drain Voltage – Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage ...
Page 7
... HAT3021R P Channel Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics –5.0 -10 V -4.5 V –2.5 0 –5 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage –1000 –800 –600 – ...
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... HAT3021R Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 I = –0.5 A, – 300 200 –0.5 A, –1 A, –2 A 100 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 –100 –0.1 –0.3 –1 Reverse Drain Current ...
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... HAT3021R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 10 100 Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin -10 V Rev.2.00, Oct.06.2004, page Reverse Drain Current vs. Source to Drain Voltage –5.0 –10 V –5 V –2 0V Pulse Test 0 –0.4 –0.8 –1.2 – ...
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... Base material dimension Ordering Information Part Name HAT3021R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Oct.06.2004, page ...
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... Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp third party. ...