TN2510 Supertex Inc, TN2510 Datasheet

TN2510

Manufacturer Part Number

TN2510

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN2510.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

TN2510N8

Manufacturer:

SUPERTEX

Quantity:

20 000

Current page: 1 of 4
Download datasheet (479Kb)

Ordering Information

†

Features

❏ Low threshold —2.0V max.

❏ High input impedance

❏ Low input capacitance — 125pF max.

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

MIL visual screening available.

Distance of 1.6 mm from case for 10 seconds.

Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

100V

DSS

DGS

(max)

1.5Ω

DS(ON)

(max)

2.0V

GS(th)

-55°C to +150°C

N-Channel Enhancement-Mode

Vertical DMOS FETs

(min)

3.0A

D(ON)

300°C

± 20V

DGS

DSS

Order Number / Package

Package Option

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

TN2510N8

TO-243AA*

Where ❋ = 2-week alpha date code

Product marking for TO-243AA:

Note: See Package Outline section for dimensions.

TN5A❋

TN2510ND

TO-243AA

Die

(SOT-89)

†

Low Threshold

TN2510

Related parts for TN2510

TN2510 Summary of contents

Page 1

... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TN2510 Low Threshold † Die TN2510ND TN5A❋ TO-243AA (SOT-89) ...

Page 2

... I = 750mA 10V 750mA GS D %/° 10V 750mA 25V 1. 0V 25V MHz 25V 1.5A 25Ω GEN PULSE R gen INPUT TN2510 I DRM 5.0A L OUTPUT D.U.T. ...

Page 3

... Typical Performance Curves ° ° ° ° 3 TN2510 ° ° ...

Page 4

... Variation with Temperature (th 5V, 0.75A DS(ON) 1 1mA (th) 1.0 0.9 0.8 - 100 T ° Gate Drive Dynamic Characteristics 10V 40V DS 190 70pF 0 0 0.5 1.0 1.5 2.0 Q (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com TN2510 10 2.0 1.6 1.2 0.8 0.4 150 2.5 11/12/01 ...

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