TN2510 Supertex Inc, TN2510 Datasheet
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TN2510
Manufacturer Part Number
TN2510
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet
1.TN2510.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2510N8
Manufacturer:
SUPERTEX
Quantity:
20 000
Ordering Information
*
†
Features
❏ Low threshold —2.0V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
MIL visual screening available.
Distance of 1.6 mm from case for 10 seconds.
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
BV
BV
100V
DSS
DGS
/
R
(max)
1.5Ω
DS(ON)
V
(max)
2.0V
GS(th)
-55°C to +150°C
N-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
I
3.0A
BV
D(ON)
BV
300°C
± 20V
DGS
DSS
1
Order Number / Package
Package Option
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
TN2510N8
TO-243AA*
Where ❋ = 2-week alpha date code
Product marking for TO-243AA:
Note: See Package Outline section for dimensions.
TN5A❋
TN2510ND
G
TO-243AA
Die
(SOT-89)
D
S
†
Low Threshold
D
TN2510
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TN2510 Summary of contents
Page 1
... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TN2510 Low Threshold † Die TN2510ND TN5A❋ TO-243AA (SOT-89) ...
Page 2
... I = 750mA 10V 750mA GS D %/° 10V 750mA 25V 1. 0V 25V MHz 25V 1.5A 25Ω GEN PULSE R gen INPUT TN2510 I DRM 5.0A L OUTPUT D.U.T. ...
Page 3
... Typical Performance Curves ° ° ° ° 3 TN2510 ° ° ...
Page 4
... Variation with Temperature (th 5V, 0.75A DS(ON) 1 1mA (th) 1.0 0.9 0.8 - 100 T ° Gate Drive Dynamic Characteristics 10V 40V DS 190 70pF 0 0 0.5 1.0 1.5 2.0 Q (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com TN2510 10 2.0 1.6 1.2 0.8 0.4 150 2.5 11/12/01 ...