TN2510 Supertex Inc, TN2510 Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
TN2510
Manufacturer Part Number
TN2510
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet
1.TN2510.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2510N8
Manufacturer:
SUPERTEX
Quantity:
20 000
Switching Waveforms and Test Circuit
Thermal Characteristics
*
†
Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
I
D
TO-243AA
(continuous) is limited by max rated T
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
OUTPUT
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
Package
GS(th)
SD
DS(ON)
ISS
OSS
RSS
FS
INPUT
GS(th)
DSS
DS(ON)
10V
V
0V
0V
DD
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Static Drain-to-Source
ON-State Resistance
10%
I
D
(continuous)*
t
d(ON)
0.73A
10%
t
GS(th)
DS(ON)
(ON)
90%
j
.
Parameter
t
with Temperature
r
with Temperature
I
D
90%
t
d(OFF)
(pulsed)
5.0A
t
(@ 25°C unless otherwise specified)
(OFF)
D
increase possible on ceramic substrate.
t
90%
F
10%
Power Dissipation
Min
100
0.4
0.6
1.2
3.0
@ T
2
1.6W
A
= 25
Typ
300
†
2.0
6.0
1.5
1.0
0.8
70
30
15
°
C
Max
0.75
GENERATOR
-4.5
100
125
2.0
1.0
2.0
1.5
1.8
10
15
70
25
10
10
20
10
PULSE
°
C/W
θ
15
jc
INPUT
R
mV/°C
gen
%/°C
Unit
mA
µA
ns
nA
pF
ns
A
Ω
V
V
V
°
C/W
78
θ
ja
V
f = 1 MHz
V
I
R
V
V
V
V
V
V
T
V
V
V
V
V
V
V
V
V
D
†
GS
DD
A
GEN
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
= 1.5A,
= 125°C
= 0V, V
= 25V,
= 3.0V, I
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, V
= 5.0V, V
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V, I
= 0V, I
= 25Ω
DS
DS
Conditions
, I
, I
D
SD
SD
0.73A
I
DS
DS
DS
DR
D
D
D
D
D
= 2mA
D
D
= 1mA
= 1.0mA
DS
DS
= 1.5A
= 1.5A
= 750mA
= 750mA
= 1.0A
*
= 250mA
= 25V
= 750mA
= Max Rating
= 0.8 Max Rating
DS
= 25V
V
= 25V
DD
= 0V
R
L
D.U.T.
OUTPUT
5.0A
I
DRM
TN2510