ATP106 Sanyo Semicon Device, ATP106 Datasheet - Page 2

• Manufacturer Part Number: ATP106
• Description: P-Channel Silicon MOSFET General-Purpose Switching Device Applications
• Manufacturer: Sanyo Semicon Device

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--10V
P.G
0V
PW=10μs
D.C.≤1%
0.8
1
V IN
2.3
Parameter
6.5
4
2
2.3
V IN
3
G
50Ω
0.6
V DD = --20V
D
S
0.55
I D = --15A
R L =1.33Ω
0.4
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
ATP106
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
1.5
Symbol
V OUT
0.4
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =--15A
I D =- -15A, V GS =- -10V
I D =- -8A, V GS =- -4.5V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--20V, V GS =- -10V, I D =--30A
V DS =--20V, V GS =--10V, I D =--30A
V DS =--20V, V GS =--10V, I D =--30A
I S =--30A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
ATP106
4.6
2.6
Conditions
0.4
min
- -1.5
Ratings
typ
--0.97
www.DataSheet4U.com
1380
210
150
120
110
6.4
5.9
19
12
90
29
28
29
max
--2.6
--1.5
25
41
No. A1597-2/4
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V