ATP201 Sanyo Semicon Device, ATP201 Datasheet
ATP201
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ATP201 Summary of contents
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... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP201 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... V DS =15V =10V =35A Qgd V DS =15V =10V =35A =35A =0V 1.5 4.6 2.6 0.4 0.4 0. Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK I D =18A R L =0.83Ω V OUT ATP201 S Ratings Unit min typ max 1.2 2 mΩ mΩ 985 pF ...
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... Drain Current Time -- =15V 1000 V GS =10V 100 1.0 0.1 Drain Current ATP201 Tc=25°C Single pulse 1.0 1.2 1.4 1.6 1.8 2.0 IT14959 Tc=25 ° C Single pulse IT14961 ...
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... Case Temperature °C Note on usage : Since the ATP201 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...