BUZ100S Siemens Semiconductor Group, BUZ100S Datasheet
BUZ100S
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BUZ100S Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • 175°C operating temperature • also in SMD available V Type DS BUZ 100 Maximum Ratings Parameter Continuous drain ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = 154 ...
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Power dissipation tot C 180 W P 140 tot 120 100 100 120 140 Safe operating area parameter ...
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Typ. output characteristics parameter µ ° 170 P = 170W tot 140 I D 120 100 ...
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Drain-source on-resistance (on) j parameter 0.050 0.040 R DS (on) 0.035 0.030 0.025 98% 0.020 typ 0.015 0.010 0.005 0.000 -60 - Typ. ...
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Avalanche energy parameter 128 µH GS 400 mJ 320 E AS 280 240 200 160 120 ...