BUZ100SL Siemens Semiconductor Group, BUZ100SL Datasheet
BUZ100SL
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BUZ100SL Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • rated • 175°C operating temperature • also in SMD available V Type DS BUZ 100 Maximum Ratings ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = 140 ...
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Power dissipation tot C 180 W P 140 tot 120 100 100 120 140 Safe operating area parameter ...
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Typ. output characteristics parameter µs p 160 P = 170W tot 120 100 0.0 0.5 1.0 1.5 ...
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Drain-source on-resistance (on) j parameter 4 0.060 0.050 R DS (on) 0.045 0.040 0.035 0.030 98% 0.025 typ 0.020 0.015 0.010 0.005 0.000 -60 -20 20 ...
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Avalanche energy parameter 155 µH GS 400 mJ 320 E AS 280 240 200 160 120 ...