BUZ101S Siemens Semiconductor Group, BUZ101S Datasheet
BUZ101S
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BUZ101S Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • 175°C operating temperature Type V DS BUZ 101 Maximum Ratings Parameter Continuous drain current °C ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot 100 120 140 Semiconductor Group Preliminary data Drain current I = ...
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Typ. output characteristics parameter µ 55W tot 0.0 0.5 1.0 1.5 2.0 ...
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Drain-source on-resistance (on) j parameter 0.20 0. (on) 0.14 0.12 0.10 98% 0.08 typ 0.06 0.04 0.02 0.00 -60 - ...
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Avalanche energy parameter: I =22A 372µH GS 100 ...