BUZ102 Siemens Semiconductor Group, BUZ102 Datasheet
BUZ102
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BUZ102 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type V DS BUZ 102 50 V Maximum Ratings ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage -40 ° Gate threshold voltage DS, D Zero gate voltage drain ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 220 W 180 P tot 160 140 120 100 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µs p 100 P = 200W tot 0.0 0.5 1.0 ...
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Drain-source on-resistance (on) j parameter 0.065 0.055 R DS (on) 0.050 0.045 0.040 0.035 98% 0.030 0.025 typ 0.020 0.015 0.010 0.005 0.000 -60 ...
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Avalanche energy parameter 102 µH GS 190 mJ 160 E AS 140 120 100 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 102 07/96 ...