BUZ103 Siemens Semiconductor Group, BUZ103 Datasheet - Page 6

• Manufacturer Part Number: BUZ103
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
=
2 x I
V
90
70
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
A
A
0
5
0
0.0
DS
0
)
P
D
tot
1
p
x R
= 120W
p
1.0
= 80 µs
= 80 µs
2
DS(on)max
3
2.0
l
4
3.0
5
k
6
D
j
4.0
= f ( V
7
8
i
g
e
c
a
GS
V
h
f
d
b
V
V GS [V]
V
a
b
c
d
e
f
g
h
i
j
k 10.0
l
DS
)
V
GS
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
6.0
10
6
Typ. drain-source on-resistance
R
parameter: V
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
0.13
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
2 x I
20
16
14
12
10
S
8
6
4
2
0
0
0
=
V
V
V
GS
GS
GS
4.0
4.5
5.0
D
a
a
a
I
[V] =
[V] =
[V] =
x R
10
D
GS
p
5.5
b
10
)
a
= 80 µs,
DS(on)max
6.0
c
20
b
6.5
d
20
30
c
7.0
e
7.5
f
30
d
40
8.0
g
e
9.0
50
h
40
10.0
fs
i
f
BUZ 103
07/96
60
= f
20.0
j
A
I
D
I
g
( I
D
A
D
h
j
)
75
i
60