BUZ104L Siemens Semiconductor Group, BUZ104L Datasheet
BUZ104L
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BUZ104L Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type V DS BUZ 104L ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µ 60W tot 0.0 1.0 2.0 3.0 4.0 ...
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Typ. drain-source on-resistance (on) D parameter 0. (on) 0.24 0.20 0.16 0.12 0. [V] = [V] = [ ...
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Avalanche energy parameter 17 114 µ ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 104L 07/96 ...