BUZ22 Siemens Semiconductor Group, BUZ22 Datasheet
BUZ22
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BUZ22 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 22 100 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 130 W 110 P tot 100 Safe operating area ...
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Typ. output characteristics parameter µ 125W tot ...
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Drain-source on-resistance (on) j parameter 0.17 0. (on) 0.12 0.10 0.08 98% typ 0.06 0.04 0.02 0.00 -60 - Typ. ...
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Avalanche energy parameter 285.5 µH GS 240 mJ 200 E AS 180 160 140 120 100 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 22 07/96 ...