BUZ326 Siemens Semiconductor Group, BUZ326 Datasheet
BUZ326
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BUZ326 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 326 400 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 130 W 110 P tot 100 Safe operating area ...
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Typ. output characteristics parameter µ 125W tot ...
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Drain-source on-resistance (on) j parameter 6 2.2 1 (on) 1.6 1.4 1.2 1.0 0.8 98% 0.6 typ 0.4 0.2 0.0 -60 -20 20 ...
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Avalanche energy parameter 10 9. 600 mJ 500 E AS 450 400 350 300 250 200 150 100 ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 BUZ 326 07/96 ...