BUZ330 Siemens Semiconductor Group, BUZ330 Datasheet

BUZ330

Manufacturer Part Number

BUZ330

Description

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Manufacturer

Siemens Semiconductor Group

Datasheets

1.BUZ330.pdf (9 pages)

2.BUZ330.pdf (9 pages)

3.BUZ330.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BUZ330

Manufacturer:

SIEMENS

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BUZ330

Manufacturer:

INFINEON

Quantity:

12 500

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SIPMOS

Semiconductor Group

• N channel

• Enhancement mode

• Avalanche-rated

Type

BUZ 330

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current

Avalanche current,limited by T

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

L = 13.4 mH, T

Gate source voltage

Power dissipation

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 9.5 A, V

= 28 °C

= 25 °C

Power Transistor

= 50 V, R

500 V

= 25 °C

9.5 A

= 25

jmax

0.6

DS(on)

jmax

Symbol

Dpuls

stg

tot

thJC

thJA

Package

TO-218 AA

Pin 1

-55 ... + 150

55 / 150 / 56

Values

670

125

Ordering Code

C67078-S3105-A2

9.5

Pin 2

BUZ 330

07/96

Unit

°C

K/W

Pin 3

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