BUZ338 Siemens Semiconductor Group, BUZ338 Datasheet
BUZ338
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BUZ338 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 338 500 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 190 W 160 P tot 140 120 100 Safe operating area parameter ...
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Typ. output characteristics parameter µ 180W l tot ...
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Drain-source on-resistance (on) j parameter 8 1.7 1 (on) 1.2 1.0 0.8 98% 0.6 typ 0.4 0.2 0.0 -60 - Typ. ...
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Avalanche energy parameter 13 9. 1000 mJ 800 E AS 700 600 500 400 300 200 100 0 ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 BUZ 338 07/96 ...