BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 7

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
C
DS (on)
DS (on)
10
10
10
10
nF
13
11
10
-1
-2
9
8
7
6
5
4
3
2
1
0
-60
1
0
0
DS
= ( T
)
D
5
j
GS
)
= 3.2 A, V
-20
= 0V, f = 1MHz
10
20
15
GS
98%
typ
20
= 10 V
60
25
100
30
T
°C
V
V
j
C
C
C
DS
iss
oss
rss
160
40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
V
-1
-60
2
1
0
0.0
SD
= ( T
)
0.4
j
j
GS
, t
)
-20
p
= V
= 80 µs
0.8
DS
20
, I
1.2
T
T
T
T
D
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
98%
typ
2%
= 1 mA
1.6
60
2.0
100
BUZ 358
2.4
01/97
T
V
°C
j
SD
V
160
3.0