BUZ72 Siemens Semiconductor Group, BUZ72 Datasheet
BUZ72
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BUZ72 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 72 100 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot Safe operating area parameter 0.01 ...
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Typ. output characteristics parameter µ 40W tot 0.0 1.0 2.0 ...
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Drain-source on-resistance (on) j parameter 0.65 0. (on) 0.50 0.45 0.40 0.35 0.30 98% 0.25 typ 0.20 0.15 0.10 0.05 0.00 -60 ...
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Avalanche energy parameter 885 µ ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 72 07/96 ...