BUZ78 Siemens Semiconductor Group, BUZ78 Datasheet
BUZ78
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BUZ78 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 78 800 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot Safe operating area parameter 0.01 ...
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Typ. output characteristics parameter µ 40W tot 2 2.4 2.0 1.6 1.2 0.8 0.4 0 ...
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Drain-source on-resistance (on) j parameter (on 98% 12 typ -60 - Typ. capacitances ...
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Avalanche energy parameter 1 142 mH GS 180 140 120 100 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 78 07/96 ...