NE3508M04 California Eastern Labs, NE3508M04 Datasheet - Page 2

• Manufacturer Part Number: NE3508M04
• Description: HETERO JUNCTION FIELD EFFECT TRANSISITOR
• Manufacturer: California Eastern Labs

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RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)
ELECTRICAL CHARACTERISTICS T
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Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Trans conductance
N
A
Output Power at 1dB Gain
Compression Point
Drain to Source Voltage
D
n I
s
a r
o
p
s
s i
t u
n i
o
e
c
P
C
F
a i
o
r u
g i
PARAMETER
e t
w
u
e r
PARAMETER
d
r e
e r
t n
G
a
n i
The information in this document is subject to change without notice.
PRELIMINARY PRODUCT INFORMATION
SYMBOL
V
P
SYMBOL
I
DS
D
n i
V
Po
GS(off)
I
I
GSO
DSS
gm
N
G
(1dB)
F
a
A
= +25 °C)
MIN.
---
---
- - -
TEST CONDITIONS
V
V
V
V
V
f 2GHz
V
I
f 2GHz
D
GS
DS
DS
DS
DS
DS
=30mA(Non-RF)
=2V, V
=2V, I
=2V, I
=2V, I
=3V,
=-3V
TYP.
D
D
D
GS
10
- - -
=100µA
=10mA
=10mA
2
=0V
MAX.
30
3
0
MIN.
-0.35
100
12
---
- - -
---
60
UNIT
d
mA
B
V
NE3508M04
m
TYP.
-0.5
0.45
14
18
---
90
1
MAX.
-0.65
120
0.9
20
---
---
---
UNIT
dBm
mA
mS
µA
dB
dB
V