NE3508M04 California Eastern Labs, NE3508M04 Datasheet - Page 4

• Manufacturer Part Number: NE3508M04
• Description: HETERO JUNCTION FIELD EFFECT TRANSISITOR
• Manufacturer: California Eastern Labs

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2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
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0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
f=2.5GHz, VDS=2V
REFERENCE DATA
10
vs. DREIN CURRENT
Drein Current ID (mA)
NFmin
-10
-20
-30
-40
-50
-60
-70
-80
40
30
20
10
0
-25
20
Ga
-20
@f=2.5GHz, VDS=3V, ID=30mA(non-RF)
30
-15
-10
40
20
18
16
14
12
10
8
6
4
2
0
-5
Pin (dBm)
0
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1.0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
15
f=2.5GHz, ID=10mA
vs. DREIN TO SOURCE VOLTAGE
NFmin
1.5
Drein to Source Voltage VDS (V)
20
25
2.0
50
45
40
35
30
25
20
15
10
5
0
NE3508M04
Pout(2tone)
IM3L
IM3H
Id
2.5
Ga
3.0
3.5
20
18
16
14
12
10
8
6
4
2
0