NE3508M04 California Eastern Labs, NE3508M04 Datasheet - Page 9
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NE3508M04
Manufacturer Part Number
NE3508M04
Description
HETERO JUNCTION FIELD EFFECT TRANSISITOR
Manufacturer
California Eastern Labs
Datasheet
1.NE3508M04.pdf
(11 pages)
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www.DataSheet4U.com
REFERENCE DATA
NE3508M04
Noise-parameter
VDS=2 V ID=10mA
(GHz)
10.0
10.5
11.0
11.5
12.0
freq
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Fmin
0.31
0.36
0.41
0.45
0.50
0.54
0.58
0.63
0.67
0.71
0.76
0.80
0.84
0.88
0.93
0.97
1.01
1.05
1.10
1.14
1.18
1.22
(dB)
0.662
0.596
0.530
0.476
0.435
0.406
0.387
0.377
0.376
0.382
0.394
0.412
0.433
0.458
0.485
0.513
0.542
0.569
0.594
0.617
0.635
0.649
MAG
Gammaopt
-177.1
-163.6
-150.7
-138.6
-127.2
-116.6
-107.0
108.3
123.9
139.2
154.2
168.8
-98.4
-90.9
-84.5
-79.3
-75.4
ANG
28.9
44.8
60.7
76.7
92.6
Rn/50
0.089
0.089
0.089
0.084
0.077
0.069
0.061
0.053
0.047
0.044
0.044
0.049
0.059
0.076
0.100
0.131
0.168
0.209
0.253
0.297
0.340
0.377
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