2SA1127 Panasonic Semiconductor, 2SA1127 Datasheet
2SA1127
Manufacturer Part Number
2SA1127
Description
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1127.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1127
Manufacturer:
PANASONIC
Quantity:
15 000
Company:
Part Number:
2SA1127-S
Manufacturer:
Panasonic
Quantity:
38 800
Transistor
2SA1127
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2634
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
FE
Features
Low noise characteristics.
High foward current transfer ratio h
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
180 ~ 360
R
260 ~ 520
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
V
V
f
NV
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE
*
(Ta=25˚C)
FE
360 ~ 700
–55 ~ +150
.
Ratings
T
–200
–100
–60
–55
400
150
–7
V
V
I
I
I
V
I
V
V
V
R
C
C
E
C
g
CB
CE
CE
CE
CB
CE
= –10 A, I
= –1mA, I
= –10 A, I
= –100mA, I
= 100k , Function = FLAT
= –10V, I
= –5V, I
= –1V, I
= –10V, I
= –10V, I
= –5V, I
Unit
mW
mA
mA
Conditions
C
C
˚C
˚C
E
B
V
V
V
C
E
B
C
E
= –2mA
= –30mA
= 2mA, f = 200MHz
= 0
= 0
= 0
B
= 0
= 0
= –1mA, G
= –10mA
V
= 80dB
1.27
0.45
min
–60
–55
180
–7
2.54 0.15
5.0 0.2
1
+0.2
–0.1
2
3
– 0.01
200
typ
1.27
–1
0.45
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
–100
– 0.6
+0.2
–0.1
max
700
150
–1
–1
4.0 0.2
Unit: mm
MHz
Unit
mV
nA
V
V
V
V
V
A
1
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2SA1127 Summary of contents
Page 1
... Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Features Low noise characteristics. High foward current transfer ratio h Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Peak collector current ...
Page 2
... V Function=FLAT =100k 22k – 0.01 – 0.03 – 0.1 – 0.3 – Collector current I C 2SA1127 I — –120 V =–5V CE 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 – – 0.4 – 0.8 –1.2 –1.6 –2 Base to emitter voltage V ...