2SA1169 Inchange, 2SA1169 Datasheet
2SA1169
Manufacturer Part Number
2SA1169
Description
Silicon PNP Power Transistors
Manufacturer
Inchange
Datasheet
1.2SA1169.pdf
(3 pages)
www.DataSheet4U.com
Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With MT-200 package
·High power dissipation
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
Absolute maximum ratings(Ta=25
SYMBOL
PIN
V
V
V
T
P
1
2
3
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
B
Base
Collector;connected to
mounting base
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
℃)
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (MT-200) and symbol
CONDITIONS
Product Specification
-55~150
VALUE
-200
-200
150
150
-15
-6
-5
2SA1169
UNIT
℃
℃
W
V
V
V
A
A
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2SA1169 Summary of contents
Page 1
... Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (MT-200) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SA1169 VALUE UNIT -200 V -200 - 150 W ℃ 150 ℃ -55~150 ...
Page 2
... I =0 -200 =-1mA ; I =0 -200 =-1mA ; =-5A ;I =-0. =-5A ;I =-0. =-200V =- =-10V 2SA1169 TYP. MAX UNIT -2.0 V -2.5 V μA -10 μA -10 20 MHz ...
Page 3
... Inchange Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Fig.2 outline dimensions 3 Product Specification 2SA1169 ...