2SA1961 Panasonic Semiconductor, 2SA1961 Datasheet

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2SA1961

Manufacturer Part Number
2SA1961
Description
Silicon PNP epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA1961-Q
Manufacturer:
PANASONIC
Quantity:
2 000
Part Number:
2SA19610
Manufacturer:
PANASIONIC
Quantity:
20 000
Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE
Features
High collector to emitter voltage V
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
Rank classification
FE
Parameter
Parameter
30 ~ 100
P
60 ~ 150
Symbol
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
*
V
V
h
V
f
C
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*1
CEO
(Ta=25˚C)
–55 ~ +150
.
2
Ratings
or more, and the board
–200
–200
– 0.1
–70
150
–5
1
I
I
V
I
V
V
C
E
C
CE
CB
CB
= –100 A, I
= –1 A, I
= –50mA, I
= –10V, I
= –5V, I
= –10V, I
Unit
C
mA
Conditions
˚C
˚C
E
W
V
V
V
A
= 0
C
B
E
= 10mA, f = 200MHz
B
= 0, f = 1MHz
= –5mA
= –5mA
= 0
Note: In addition to the
0.65 max.
0.45
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
+0.1
–0.05
0.7
–200
min
1
–5
30
0.45
2.5 0.5
1.2 0.1
4.0
6.9 0.1
+
0.1
0.05
2
2.5 0.5
max.
typ
0.65
30
3
7
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.05
0.05
max
–2.5
150
2.5 0.1
(HW type)
(1.45)
Unit: mm
0.8
MHz
Unit
pF
V
V
V
1

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2SA1961 Summary of contents

Page 1

... Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 Features High collector to emitter voltage V Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Peak collector current I CP Collector current ...

Page 2

... CE 210 180 150 Ta=75˚C 120 25˚C 90 –25˚ –1 –3 –10 –30 –100 –300 –1000 ( mA ) Collector current I C 2SA1961 I — –120 V =–10V CE 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 – – 0.2 – 0.4 – 0.6 – 0.8 –1.0 – ...

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