2SA1982 Panasonic Semiconductor, 2SA1982 Datasheet
2SA1982
Manufacturer Part Number
2SA1982
Description
Silicon PNP epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1982.pdf
(2 pages)
Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC5346
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Collector output capacitance
h
FE
Features
Satisfactory foward current transfer ratio h
characteristics.
High collector to emitter voltage V
Small collector output capacitance C
Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
Rank classification
FE
Parameter
Parameter
130 ~ 220
R
185 ~ 330
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
*
I
V
V
h
V
NV
f
C
CBO
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*1
CEO
(Ta=25˚C)
ob
–55~+150
.
2
.
Ratings
or more, and the board
–150
–150
–100
–50
150
–5
1
FE
V
I
I
V
I
V
R
V
V
collector current I
C
E
C
g
CB
CB
CE
CE
CB
= –0.1mA, I
= –10 A, I
= –30mA, I
= 100k , Function = FLAT
= –10V, I
= –5V, I
= –10V, I
= –100V, I
= –10V, I
Unit
mA
mA
Conditions
C
˚C
˚C
W
V
V
V
C
E
C
B
E
= –10mA
B
= 10mA, f = 200MHz
= 0
E
= 0, f = 1MHz
= –1mA, G
= –3mA
= 0
= 0
C
V
= 80dB
Note: In addition to the
0.65 max.
0.45
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
+0.1
–0.05
0.7
–150
min
1
130
–5
0.45
2.5 0.5
1.2 0.1
4.0
6.9 0.1
+
–
0.1
0.05
2
2.5 0.5
150
200
max.
typ
0.65
3
1.05
1:Emitter
2:Collector
3:Base
MT2 Type Package
0.05
max
330
300
2.5 0.1
–1
–1
5
(HW type)
(1.45)
Unit: mm
0.8
MHz
Unit
mV
pF
V
V
V
A
1
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2SA1982 Summary of contents
Page 1
... Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 Features Satisfactory foward current transfer ratio h characteristics. High collector to emitter voltage V Small collector output capacitance C Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage 40W output amplifier. ...
Page 2
... C — f=1MHz Ta=25˚ –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB 2SA1982 V — I CE(sat) C – = –3 –1 Ta=75˚C – 0.3 25˚C – 0.1 –25˚C – 0.03 – 0.01 – 0.003 – 0.001 –1 –3 –10 – ...