2SA2004 Panasonic Semiconductor, 2SA2004 Datasheet

2SA2004

Manufacturer Part Number

2SA2004

Description

Silicon PNP epitaxial planer type

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SA2004.pdf (1 pages)

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Power Transistors

2SA2004

Silicon PNP epitaxial planer type

For power amplification

I Features

I Absolute Maximum Ratings T

I Electrical Characteristics T

• High forward current transfer ratio h

• Satisfactory linearity of forward current transfer ratio h

• Dielectric breakdown voltage of the package: > 5 kV

• High-speed switching

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Collector cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Turn-on time

Storage time

Fall time

Parameter

= 25°C

Symbol

CBO

CEO

EBO

stg

Symbol

= 25°C ± 3°C

CE(sat)

BE(sat)

CBO

CEO

FE1

FE2

CEO

stg

= 25°C

−55 to +150

Rating

−60

−16

150

2.0

−5

−8

= −10 mA, I

= −5 A, I

= −4 A, I

= 400 mA, V

= −60 V, I

= −2 V, I

Unit

°C

Conditions

= − 0.25 A

= −400 mA

= − 0.1 A

= −5 A

= 0

= 50 V

9.9

Min

−60

100

±0.3

2.54

5.08

0.8

1.6

1.4

±0.1

±0.2

±0.30

±0.50

φ 3.2

Typ

0.2

0.1

0.5

±0.1

TO-220D Package

−100

Max

−1.2

−1.7

0.15

230

0.5

1.0

4.6

±0.2

1: Base

2: Collector

3: Emitter

0.55

Unit: mm

2.9

2.6

±0.15

Unit

µA

µs

±0.2

±0.1

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