2SA2080 Renesas Technology, 2SA2080 Datasheet - Page 4

• Manufacturer Part Number: 2SA2080
• Description: SILICON PNP EPITAXIAL
• Manufacturer: Renesas Technology

2SA2080
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Notes: 1. The 2SA2080 is grouped by h
Rev.0, Feb. 2002, page 2 of 6
(Ta = 25°C)
Grade
Mark
h
FE
B
MB
100 to 200
I
Symbol
V
V
V
I
h
V
V
CBO
EBO
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
Symbol
V
V
V
I
I
P
Tj
Tstg
C
E
C
MC
160 to 320
CBO
CEO
EBO
C
FE
*
as follows.
Min
–30
–30
–5


100


Typ








D
MD
250 to 500
Ratings
–30
–30
–5
–100
100
150
150
–55 to +125
Max



–0.5
–0.5
500
–0.2
–0.75
Unit
V
V
V
µA
µA

V
V
Test conditions
I
I
I
V
V
V
I
V
C
C
E
C
CB
EB
CE
CE
= –10 µA, I
= –10 µA, I
= –1 mA, R
= –10 mA, I
= –20 V, I
= –2 V, I
= –12 V, I
= –12 V, I
Unit
V
V
V
mA
mA
mW
°C
°C
C
C
E
BE
E
C
C
= 0
B
= 0
= 0
= 0
= –2 mA
= –2 mA
= –1 mA
= ∞