2SA2186 Sanyo Semicon Device, 2SA2186 Datasheet

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2SA2186

Manufacturer Part Number
2SA2186
Description
PNP Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semicon Device
Datasheet

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2SA2186
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SANYO
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Ordering number : ENA0269
2SA2186
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Adoption of MBIT processes.
High current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
Cob
I CP
P C
I C
I B
f T
Tj
V CB =- -40V, I E =0A
V EB =- -4V, I C =0A
V CE =- -2V, I C =--100mA
V CE =- -2V, I C =--1.5A
V CE =- -10V, I C =--300mA
V CB =- -10V, f=1MHz
I C =--1A, I B =--50mA
I C =--1A, I B =--50mA
2SA2186
Conditions
Conditions
D2805EA MS IM TB-00001911
min
200
40
Ratings
typ
--0.22
Ratings
--0.9
420
16
--55 to +150
Continued on next page.
max
--0.43
--400
150
--1.2
- -50
- -50
560
0.9
--6
--2
--4
--1
--1
No. A0269-1/4
Unit
MHz
Unit
mA
pF
V
V
W
V
V
V
A
A
A
A
C
C

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2SA2186 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA2186 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Symbol Conditions ...

Page 2

... Collector Current 2SA2186 Symbol Conditions V (BR)CBO I C =-- =0A V (BR)CEO I C =--1mA (BR)EBO I E =-- = See specified Test Circuit. t stg See specified Test Circuit See specified Test Circuit. Switching Time Test Circuit 1 ...

Page 3

... Collector Current (sat --1 --0.01 --0.1 Collector Current 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 100 Ambient Temperature 2SA2186 7 f=1MHz --0 --0. --10 --0.01 IT10530 3 2 --1 --0.01 --1.0 IT10532 -- =20 5 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. 2SA2186 PS No. A0269-4/4 ...

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