2SA2209 Sanyo Semicon Device, 2SA2209 Datasheet
2SA2209
Manufacturer Part Number
2SA2209
Description
PNP Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semicon Device
Datasheet
1.2SA2209.pdf
(4 pages)
www.DataSheet4U.com
Ordering number : ENA0235
2SA2209
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
•
•
•
•
•
High-speed switching applications (switching regulator, driver circuit).
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor
50V / 15A High-Speed Switching
Applications
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
Cob
I CP
P C
I C
I B
f T
Tj
SANYO Semiconductors
Tc=25°C
V CB =- -40V, I E =0A
V EB =- -4V, I C =0A
V CE =- -2V, I C =--330mA
V CE =- -2V, I C =--10A
V CE =- -10V, I C =--700mA
V CB =- -10V, f=1MHz
2SA2209
Conditions
Conditions
DATA SHEET
D1306EA TI IM TC-00000354
min
200
50
Ratings
typ
Ratings
120
140
Continued on next page.
--55 to +150
max
150
--50
--50
--15
--20
500
--10
--10
20
--6
--3
No. A0235-1/4
1
MHz
Unit
Unit
µA
µA
°C
°C
pF
W
W
V
V
V
A
A
A
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2SA2209 Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA2209 SANYO Semiconductors PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching ...
Page 2
... Collector-to-Emitter Voltage 2SA2209 Symbol Conditions V CE (sat =--7.5A =--375mA V BE (sat =--7.5A =--375mA V (BR)CBO I C =--100µ =0A V (BR)CEO I C =--1mA =∞ V (BR)EBO I E =--100µ = See specified Test Circuit. ...
Page 3
... Collector-to-Base Voltage (sat = --1 --0 --0. --0.01 --0.1 --1.0 Collector Current 2SA2209 1000 100 --1.0 --1.2 --1.4 --0.01 IT09989 1000 Ta=25 ° 100 --10 --0.01 IT09991 --1 ...
Page 4
... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. 2SA2209 1.2 1.0 0.8 0.6 ...