BFG25 Philips Semiconductors, BFG25 Datasheet - Page 2

• Manufacturer Part Number: BFG25
• Description: NPN 5 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
1997 Oct 29
V
V
I
P
h
f
G
F
SYMBOL
C
T
FE
Low current consumption
(100 A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
CBO
CEO
tot
NPN 5 GHz wideband transistor
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
PARAMETER
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
PINNING
PIN
1
2
3
4
T
I
I
f = 500 MHz; T
I
f = 1 GHz; T
I
f = 1 GHz;
I
C
C
C
C
C
s
=
= 0.5 mA; V
= 1 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
collector
emitter
base
emitter
165 C
opt
; T
DESCRIPTION
CONDITIONS
amb
2
amb
CE
CE
=
= 25 C
CE
CE
CE
amb
= 1 V;
= 1 V; f = 1 GHz;
= 25 C
opt
= 1 V
= 1 V;
= 1 V;
; T
= 25 C
amb
= 25 C
handbook, 2 columns
50
3.5
MIN.
Marking code: V11.
Top view
1
4
Fig.1 SOT143B.
80
5
18
1.8
2
TYP.
Product specification
BFG25A/X
8
5
6.5
32
200
MAX.
MSB014
3
2
V
V
mA
mW
GHz
dB
dB
dB
UNIT