BFG25 Philips Semiconductors, BFG25 Datasheet - Page 3

• Manufacturer Part Number: BFG25
• Description: NPN 5 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
1997 Oct 29
V
V
V
I
P
T
T
R
I
h
C
f
G
F
SYMBOL
SYMBOL
SYMBOL
C
j
CBO
T
FE
stg
j
CBO
CEO
EBO
tot
th j-s
= 25 C unless otherwise specified.
re
NPN 5 GHz wideband transistor
UM
s
s
UM
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming S
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point note 1
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
T
I
I
I
I
T
I
f = 1 GHz; T
I
I
E
C
C
C
C
C
C
s
amb
=
=
= 0; V
= 0.5 mA; V
= i
= 1 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
165 C; note 1
c
= 25 C; f = 500 MHz
opt
opt
= 0; V
; T
; T
CB
amb
amb
= 5 V
CONDITIONS
CONDITIONS
3
amb
CB
CE
CE
12
= 25 C
= 25 C
CE
CE
CE
is zero and
= 1 V; f = 1 MHz
= 1 V;
= 1 V; f = 1 GHz;
= 25 C
= 1 V
= 1 V;
= 1 V; f = 1 GHz;
CONDITIONS
G
UM
=
10 log
50
3.5
MIN.
65
MIN.
------------------------------------------------------------- - dB
VALUE
1
320
–
S
80
0.21
5
18
1.8
2
TYP.
11
8
5
2
6.5
32
150
175
Product specification
S
2
MAX.
21
BFG25A/X
1
2
50
200
0.3
MAX.
–
S
22
UNIT
K/W
V
V
V
mA
mW
C
C
2
UNIT
pF
GHz
dB
dB
dB
UNIT
A