BFG25 Philips Semiconductors, BFG25 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/522/philips_semiconductors_sml.jpg)
BFG25
Manufacturer Part Number
BFG25
Description
NPN 5 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BFG25.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFG25A
Manufacturer:
NXP
Quantity:
51 000
Company:
Part Number:
BFG25AW
Manufacturer:
NXP
Quantity:
42 000
Company:
Part Number:
BFG25AX
Manufacturer:
STM
Quantity:
2 813
Philips Semiconductors
1997 Oct 29
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
V
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
gain
(dB)
I
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
C
gain
(dB)
CE
= 0.5 mA; V
Fig.6
= 1 V; f = 500 MHz.
30
20
10
50
40
30
20
10
0
0
10
Fig.8
0
Gain as a function of collector current;
typical values.
CE
0.5
= 1 V.
Gain as a function of frequency;
typical values.
10
G UM
2
MSG
1.0
G UM
MSG
1.5
10
3
f (MHz)
2.0
I
C
MCD141
MCD143
(mA)
10
2.5
4
5
handbook, halfpage
handbook, halfpage
gain
(dB)
V
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
I
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
gain
(dB)
C
CE
= 1 mA; V
Fig.7
= 1 V; f = 1 GHz.
20
15
10
50
40
30
20
10
5
0
0
10
Fig.9
0
CE
Gain as a function of collector current;
typical values.
= 1 V.
0.5
Gain as a function of frequency;
typical values.
10
2
G UM
MSG
1.0
G UM
MSG
1.5
10
3
Product specification
BFG25A/X
f (MHz)
2.0
I
C
MCD142
MCD144
(mA)
10
2.5
4