BFG67 Philips Semiconductors, BFG67 Datasheet - Page 3

• Manufacturer Part Number: BFG67
• Description: NPN 8 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
1998 Oct 02
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 8 GHz wideband transistors
(mW)
P
s
s
tot
400
300
200
100
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to soldering point
Fig.3 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
MBC984 - 1
s
(
o
C)
200
open emitter
open base
open collector
T
s
65 C; see Fig.3; note 1
3
CONDITIONS
note 1
BFG67; BFG67/X; BFG67/XR
CONDITIONS
65
MIN.
Product specification
20
10
2.5
50
380
150
175
VALUE
MAX.
290
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W