BFG67 Philips Semiconductors, BFG67 Datasheet - Page 5

• Manufacturer Part Number: BFG67
• Description: NPN 8 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1998 Oct 02
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistors
(GHz)
V
V
h
CE
CE
T f
Fig.4
FE
120
= 5 V.
= 8 V; T
Fig.6
80
40
10
4
8
6
2
0
0
0
0
DC current gain as a function of collector
current.
amb
Transition frequency as a function of
collector current.
= 25 ; f = 2 GHz.
10
20
20
40
30
I
C
I
C
(mA)
MBB301
(mA)
MBB303
40
60
5
handbook, halfpage
handbook, halfpage
I
V
G
MSG = maximum stable gain;
G
C
CE
UM
max
= i
gain
(dB)
(pF)
C re
Fig.5
0.8
0.6
0.4
0.2
Fig.7 Gain as a function of collector current.
= 8 V; f = 1 GHz.
c
25
20
15
10
= maximum unilateral power gain;
= maximum available gain.
0
5
0
= 0; f = 1 MHz.
0
0
BFG67; BFG67/X; BFG67/XR
Feedback capacitance as a function of
collector-base voltage.
10
4
G UM
MSG
20
8
Product specification
G
30
12
max
I C (mA)
V CB (V)
MBB302
MBB304
16
40