BFG67 Philips Semiconductors, BFG67 Datasheet - Page 4

• Manufacturer Part Number: BFG67
• Description: NPN 8 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
1998 Oct 02
I
h
f
C
C
C
G
F
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
c
e
re
NPN 8 GHz wideband transistors
UM
UM
is the maximum unilateral power gain, assuming S
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
noise figure
PARAMETER
V
I
I
I
I
I
I
T
I
T
T
T
I
T
I
T
C
C
E
C
C
C
C
C
C
amb
amb
s
amb
s
amb
amb
amb
CB
= 15 mA; V
= 15 mA; V
= i
= i
= i
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 15 mA; V
=
=
= 5 V; I
e
c
c
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
= 25 C; f = 1 GHz
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz; Z
= 25 C; f = 2 GHz; Z
opt
opt
= 0; V
= 0; V
= 0; V
; I
; I
C
C
E
= 5 mA; V
= 15 mA; V
CB
EB
CB
CE
CONDITIONS
= 0
CE
CE
CE
CE
CE
= 0.5 V; f = 1 MHz
= 8 V; f = 1 MHz
= 8 V; f = 1 MHz
= 8 V;
= 5 V
= 8 V; f = 500 MHz
= 8 V;
= 8 V;
= 8 V;
4
12
is zero and
CE
CE
= 8 V
= 8 V;
S
S
= 60
= 60
BFG67; BFG67/X; BFG67/XR
G
UM
=
10
60
MIN.
log
-------------------------------------------------------------- dB.
1
–
100
8
0.7
1.3
0.5
17
10
1.3
1.7
2.5
3
TYP.
S
11
Product specification
S
2
21
50
1
2
MAX.
–
S
22
2
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
UNIT