BFP196 Siemens Semiconductor Group, BFP196 Datasheet - Page 6

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BFP196

Manufacturer Part Number
BFP196
Description
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna and telecommunications)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Collector-base capacitance C
V
Power Gain G
f = 0.9GHz
V
Semiconductor Group
C
G
CE
BE
cb
= Parameter
= v
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
dB
pF
18
14
12
10
8
6
0
0
be
= 0, f = 1MHz
20
4
ma
, G
40
8
ms
= f ( I
60
12
C
10V
)
80
cb
16
= f ( V
mA
V
0.7V
V
5V
3V
2V
1V
I
C
R
CB
120
22
)
6
Transition frequency f
V
Power Gain G
f = 1.8GHz
V
f
G
CE
T
CE
= Parameter
= Parameter
GHz
8.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
dB
10
8
7
6
5
4
3
2
1
0
0
0
20
20
ma
, G
40
40
ms
= f ( I
T
60
60
= f ( I
C
10V
10V
)
80
80
C
)
Dec-13-1996
BFP 196
mA
mA
0.7V
0.7V
5V
3V
2V
1V
I
5V
3V
2V
1V
I
C
C
120
120

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